WorldCIST'13 -The 2013 World Conference on Information Systems and Technologies

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Three-Bit Hot/Cold Page Clustering Mechanism for Improving Endurance of Flash Memory

Taehwa Lee
Hanyang Univ.
Korea, Republic Of

Jaehyuk Cha
Hanyang Univ.
Korea, Republic Of

Youjip Won
Hanyang Univ.
Korea, Republic Of

Suyong Kang
Hanyang Univ.
Korea, Republic Of

Jongmoo Choi
Dankook Univ.
Korea, Republic Of

Sungroh Yoon
Seoul National Univ.
Korea, Republic Of

Abstract:
In order to reuse a specific page, as in the case of a rewrite operation, a flash memory has to erase the block in which the page is included; this is a drawback of the flash memory. A block, which is a unit of the erase operation for the flash memory, has limited number of erase operations permitted, and if this count exceeds the threshold, the block can become a bad block and cannot be used in any future operations. Further, if SSD(Solid State Drive) exceeds a certain number of bad blocks, it cannot be used. SSD, which is a flash-memory-based storage device, has FTL to overcome the above, just as other block devices such as HDD do. In this paper, three-bit hot/cold page clustering and victim block selection based on MIN-MAX GAP are proposed to extend the endurance of SSD by improving the main policies of FTL, such as victim block selection and block allocation. The proposed method decreases the erase count and improves the wear leveling. The performance evaluation reveals that the proposed method has comparable result with the existing methods and shows approximately 77% improvement in terms of the wear leveling.

 

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